22–28 Jun 2019
DoubleTree at the Entrance to Universal Orlando
America/New_York timezone

Characterization of Nano-second Pulsed Power Generator Synchronizing Double Inductive Energy Storage Circuits with Semiconductor Opening Switch

25 Jun 2019, 11:15
15m
Space Coast I-III (Double Tree at the Entrance to Universal Orlando)

Space Coast I-III

Double Tree at the Entrance to Universal Orlando

Oral 7.2 High Current/High Power Pulsers 7.2 High Current and High Power Pulsers I

Speaker

Taichi Sugai (Nagaoka University of Technology)

Description

As a new method to enhance nanosecond pulsed power, aiming improvement of cold plasma applications, we designed a type of circuit that is amplified by synchronization of double simple inductive energy storage (IES) circuits with a semiconductor opening switch (SOS) diode. Secondary circuits of simple IES circuits which consist of capacitors, a pulse transformer, MOS-gated thyristors, and a SOS, were connected in parallel and in series, and power amplification has been succeeded at low repetition rate by synchronization of reverse currents through the SOS diodes in two circuits. However, there are some problems, e.g., synchronization deviation by variation of load and repletion rate, difficulty of circuit adjustment for synchronization, and low efficiency. Aiming to those improvement, characterization of the pulsed power generator was carried out by spice simulation and experimental circuit estimation. Our presentation details current and energy transfer path in the circuit including parasitic components, which were obtained from the circuit characterization.

Author

Taichi Sugai (Nagaoka University of Technology)

Co-authors

Mr Kosuke Yawata (Nagaoka University of Technology) Mr Yiwen Yang (Nagaoka University of Technology) Mr Akira Tokuchi (Pulsed Power Japan Laboratory Ltd.) Weihua Jiang (Nagaoka University of Technology)

Presentation materials

There are no materials yet.