Speaker
Description
This work describes laboratory measurements of recently-fabricated, state-of-the-art Silicon Carbide (SiC) Insulated-Gate Bipolar Transistors (IGBTs) developed for medium-voltage converters and pulsed-power applications. These next-generation, monolithic devices, have an active area of 0.3 cm2, a drift region of 160 µm, and are rated for 20-kV and 20 A. The IGBTs were co-packaged with SiC JBS/PiN anti-parallel diodes in a half-bridge configuration and utilize Al2O3/SiN substrates for improved thermal performance. In this paper the characteristics of the modules are presented with a focus on switching and conduction losses, power dissipation, burst-mode, and continuous operation. This work supports the U.S. Army Research Laboratory mission to push existing state-of-the-art SiC IGBT technology beyond its current state, to drive innovation in device process, fabrication, design, and packaging, to steer design of SiC IGBTs for pulsed power and low-duty-cycle continuous power Army applications, and demonstrate latest SiC technology with small scale prototypes.
