22–28 Jun 2019
DoubleTree at the Entrance to Universal Orlando
America/New_York timezone

5P15 - Design of Modular High-Voltage Nanosecond Pulse Generator with Adjustable Rise/Fall Time Based on MMC Topologies

28 Jun 2019, 13:30
1h 30m
DoubleTree at the Entrance to Universal Orlando

DoubleTree at the Entrance to Universal Orlando

5780 Major Blvd. Orlando, Florida, 32819, USA

Speaker

Hui Wan (Chongqing University)

Description

In order to study the influence of the rise/fall time of high-voltage nanosecond pulses on cell killing effect, a high-voltage nanosecond pulse generator with adjustable rise/fall time is needed. A novel generator topology based on half-bridge modular multilevel converter (HB-MMC) is proposed. Several HB-MMC submodules are connected in series as two arms to generate unipolar/bipolar high voltage nanosecond pulses. MOSFETs are used as v solid-state switches. By controlling the switching sequence of the MOSFETs, the rise/fall time of the pulse can be adjusted. In this paper, the proposed topology as well as its operating principle are introduced in detail and verified by PSpice simulation software. A 5-stage generator is implemented and tested. The test results show that the generator can output nanosecond pulses with adjustable amplitude of 0~±4 kV, pulse width of 100~500 ns and frequency of 0~5 kHz. The rise time of the pulse can be smoothly adjusted in the range of 15-65 ns, and the fall time of the pulse can be smoothly adjusted in the range of 30-100 ns.

Authors

Prof. Yan Mi (Chongqing University) Hui Wan (Chongqing University) Lulu Liu (Chongqing University) Jiaxi Gou (Chongqing University) Jiacheng Chen (Chongqing University)

Presentation materials

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