Description
Abstract: This short course focuses on the basics of power semiconductor devices and its performance under normal and extreme condition. The course will also include the advent of silicon carbide (SiC) in the area of high temperature and high power semiconductor devices and its comparison to silicon (Si) counterpart in terms of device performance under extreme operating condition especially in pulsed power applications. The course will begin with a brief overview of material parameters, physics of power semiconductor devices and blocking voltage capability. Power devices including P-I-N and JBS diodes, Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Gate Turn off (GTO) device, comparison of silicon to silicon carbide power devices and power device modeling and simulation will also be discussed during the course.
Instructor: Dr. Stephen B. Bayne received his PhD, MS and BS degrees in Electrical Engineering from Texas Tech University. After completing his Doctoral studies, he joined the Naval Research Lab (NRL) where he was an electronics engineer designing advanced power electronics systems for space power applications. After two and a half years at NRL, Dr. Bayne transferred to the Army Research Lab (ARL) where he was instrumental in developing a high temperature power electronic and pulsed power program. After 8 years at the ARL, Dr. Bayne transitioned over to academia where he is a Full Professor at Texas Tech University. His research interests at Texas Tech are Power Electronics, Power Semiconductor Devices, Pulse Power and Renewable Energy. Dr. Bayne is currently conducting research with a focus on SiC and GaN power semiconductors for pulse and continuous operation.
