2017 IEEE Pulsed Power Conference

Session

Oral session 15 - Prime Power and Power Systems - Session Chair : Brett Huhman

15

21 Jun 2017, 10:00

Hilton Brighton Metropole Hotel

119. Integrated Module Based on Reversely Switched Dynistor (RSD) and Its Stress Analysis

Lin Liang

21/06/2017, 10:00

High Power Electronics

Oral

Based on the controllable plasma layer turn-on principle, RSD(reversely switched dynsitor) has low dissipation and high di/dt capability. It is a special kind of semiconductor devices applied in the pulsed power area. Due to the advantages of small volume, low parasitic parameters and high reliability for the integrated modules, similar to the power electronic area, the integration trend has...

249. Solid-State Pulsed Power System with GaAs-PCSS for Dielectric Wall Accelerator

Yi Liu (China Academy of Engineering Physics)

21/06/2017, 10:15

High Power Electronics

Oral

Benefiting from solid-state pulsed power system with GaAs-PCSS, dielectric wall accelerator (DWA) as a new kind of high acceleration gradient accelerator has a compact construction that makes it quite suitable for some certain applications, such as proton tumor treatment and industrial inspection. The solid-state pulsed power system is made up of several groups of pulsed power units. Each...

76. Dielectric Breakdown of Vaporized Organic Carbonates

Mr Charles Nybeck (University of Texas at Arlington)

21/06/2017, 10:30

Pulsed Power Physics and Technology, Components and HV Insulation

Oral

Lithium-ion batteries are being more widely utilized as the prime power source of rep-rate pulsed power systems. Battery open circuit potentials as high as 1 kV have been proposed for use in naval shipboard power architectures. While this potential may not seem that high to engineers within the pulsed power and/or high-voltage power system communities, it is significant and must be designed...

270. A Modularized High Power Solid-State Switch for Pulsed Electric Fields (PEF) Applications

Xiaotian Chen (Zhejiang University)

21/06/2017, 10:45

High Power Electronics

Oral

Pulsed electric fields (PEF) technology is an innovative non-thermal pasteurization method by using the high electric field (more than 20 kV/cm) and short duration (ns to ms) pulses to inactivate microorganisms and enzymes with only a small increase in temperature. In accordance with the aforementioned working principle of PEF application, a repetitive high power solid-state switch with high...

283. A 100kV, IGBT switched, spark gap trigger generator

Paul W. Smith (First Light Fusion)

21/06/2017, 11:00

High Power Electronics

Oral

The lack of availability of small, fast, switches such as krytrons ( e.g. EG&G KN 6) and thyratrons (e.g. E2V FX2530) makes the design of high voltage spark gap trigger units problematic. This paper will describe a 100kV trigger generator which is switched using a high voltage, high current IGBT switch. A capacitor, charged up to 5kV, is discharged with the IGBT into the primary of a high gain...

378. OPTICAL NONLINEAR ABSORPTION PROPERTIES OF 4H-SIC—EXPERIMENT AND MODEL

Vincent Meyers (Texas Tech University)

21/06/2017, 11:15

High Power Electronics

Oral

Intensity-dependent nonlinear light absorption in bulk 4H-SiC at the above-bandgap energy of 3.49 eV (λ=355 nm) is studied. Characterization and understanding of such nonlinear optical behavior in 4H-SiC forms the basis of efficiency improvements and design of optoelectronic SiC devices, including photo-conductive semiconductor switches. It is noted that previous research performed elsewhere...

310. Current progress on a fast semiconductor-based Marx generator for a pulsed electron beam device

Martin Hochberg (Karlsruhe Institute of Technology )

21/06/2017, 11:30

High Power Electronics

Oral

A fast semiconductor-based Marx-generator is currently under development at the Institute for Pulsed Power and Microwave Technology (IHM) as driving pulse power source for a pulsed electron beam device (GESA). Its design addresses the challenging requirements of multipoint explosive emission cathodes such as fast voltage rise times below 100 ns together with flat top pulse amplitudes of 120 kV...

379. Toward the Development of an Efficient Bulk Semi-Insulating GaN Photoconductive Switch

Vincent Meyers (Texas Tech University)

21/06/2017, 12:00

High Power Electronics

Oral

Photoconductive semiconductor switches (PCSS) made from bulk, semi-insulating GaN have been fabricated and tested under pulse-charged conditions. Switching response and photocurrent efficiency of GaN PCSSs triggered by sub-10 ns, 355 nm laser pulses is reported. It is shown that fast rise time (<300 ns) voltage pulses can be used to charge a GaN PCSS to fields well beyond the DC breakdown...

385. Impulsive Dielectric Performance of HFO-gas Mixtures

Igor Timoshkin (University of Strathclyde)

21/06/2017, 12:15

High Power Electronics

Oral

There is a strong demand in the power and pulsed power industries for environmentally friendly insulating gases and liquids with advanced dielectric properties as a replacement for SF6 due to environmental concerns. Recently several novel dielectric fluids have been proposed for potential use as insulating materials. 3M has developed the fluoroketone Novec™ 5110 dielectric fluid as a possible...