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2017 IEEE Pulsed Power Conference

18–22 Jun 2017
Hilton Brighton Metropole Hotel
Europe/London timezone

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Session

Oral session 12 - Semiconductor components, Pulse Forming Networks and  Alternate Technologies (part II) - Session Chair : Luis Redondo

12
20 Jun 2017, 15:00
Hilton Brighton Metropole Hotel

Hilton Brighton Metropole Hotel

Kings Road Brighton BN1 2FU United Kingdom

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  1. 74. Solid State Spark Gap and Ignitron Replacements
    John Waldron (Silicon Power)
    20/06/2017, 15:00
    High Power Electronics
    Oral

    RoHS regulations (i.e. prohibition of Mercury) have created a need for suitable replacements of legacy tube-based high power discharge switches like Spark Gaps and Ignitrons. Silicon Power now introduces solid state discharge solutions with: favorable performance to legacy products, longer usable lifetime and the ability to comply with RoHS.
    Silicon Power’s underlying technology, Solidtron,...

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  2. 214. HIGH-VOLTAGE PICOSECOND-RANGE AVALANCHE SWITCHING OF SEMICONDUCTOR STRUCTURES WITHOUT PN-JUNCTIONS
    Pavel Rodin (Ioffe Institute, Russian Academy of Sciences)
    20/06/2017, 15:30
    High Power Electronics
    Oral

    The well-known effect of delayed impact-ionization breakdown manifests itself in 100-ps avalanche switching of Si or GaAs diode p+-n-n+ structure that is triggered by a steep voltage ramp [1-3]. Here we report first experimental observations of delayed impact ionization breakdown in Si and ZnSe semiconductor structures that do not contain any p-n junctions.
    Si n+-n-n+ structures with the...

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  3. 355. The Progression of Silicon Carbide Power Devices Under The Army’s High Voltage Power Technology Program
    Dr Miguel Hinojosa (Army Research Laboratory)
    20/06/2017, 15:45
    High Power Electronics
    Oral

    Recent advances in silicon carbide (SiC) device process, fabrication, design, and packaging have made possible the development of single die, high voltage Insulated-Gate Bipolar Transistors (IGBTs) and Junction Barrier Schottky (JBS) diodes with avalanche breakdown voltages up to 27 kV and 15 kV, respectively [1-2]. SiC power semiconductor devices fabricated on wide epitaxial drift regions...

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  4. 227. Study on the high-power semi-insulating GaAs PCSS with quantum well structure
    Dr Chongbiao Luan
    20/06/2017, 16:00
    High Power Electronics
    Oral

    A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been made on the surface of the GaAs and AlGaAs, respectively. When the prepared PCSS worked at a bias voltage of 9.8 kV and triggered by a laser...

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  5. 326. Narrow Pulse Evaluation of 15 kV SiC MOSFETs and IGBTs
    Stephen Bayne (Texas Tech University)
    20/06/2017, 16:15
    High Power Electronics
    Oral

    With the progression of silicon carbide (SiC) technologies, single semiconductor switches with higher voltage and current capabilities are emerging. Evaluating the pulsed current capability of SiC semiconductor devices for pulsed power and power electronics applications is required to understand their performance and reliability. This paper presents the narrow pulse evaluation of 15 kV SiC...

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  6. 203. INVESTIGATION OF FAST THYRISTOR SWITCHING MODULES TRIGGERED BY DIRECT OVERHEAD IGNITION
    Rainer Bischoff (ISL)
    20/06/2017, 16:30
    High Power Electronics
    Oral

    We report on the development of fast high-voltage kilo-ampere thyristor-based switching modules, which can be easily scaled by means of series connection of the thyristors. The thyristors are in each case getting triggered by the overhead ignition of breakover diodes, with the anode of the breakover diode being connected to the anode of the thyristor and the cathode of the breakover diode...

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  7. 25. Silvaco-based evaluation of 10 kV 4H-SiC MOSFET as a solid-state switch in narrow-pulse application
    Dr Bejoy Pushpakaran (Texas Tech University)
    20/06/2017, 17:00
    High Power Electronics
    Oral

    Key requirements for a solid state switch in a fast switching pulsed power circuit include high blocking voltage, high current conduction and fast switching. The wide bandgap properties of silicon carbide has enabled the development and commercialization of high voltage MOSFET whose steady state and transient characteristics meet the requirements for narrow pulse width applications. Even...

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