18–22 Jun 2017
Hilton Brighton Metropole Hotel
Europe/London timezone

Transient Simulation of a High Voltage SiC Bipolar Power Device under High Action Operation

21 Jun 2017, 13:30
1h 30m
Hall 4 / Cambridge (Hilton Brighton Metropole Hotel)

Hall 4 / Cambridge

Hilton Brighton Metropole Hotel

Board: 78
Poster Pulsed Power Physics and Technology, Components and HV Insulation Poster session III - Pulsed Power Physics and Technology, Components and HV Insulation

Speaker

Dr Miguel Hinojosa (Army Research Laboratory)

Description

This research details the high action pulse evaluation and corresponding modeling and simulation of a high voltage bipolar silicon carbide power device. A model of a high power bipolar device was developed in the Silvaco Atlas software to better understand the extreme electro-thermal stresses in the power device when subjected to an elevated-pulse current at a very unique time scale. Simulation of the on-state pulse current, device forward voltage drop, and lattice temperature profile of the pulsed power device will be presented in this research. The current density distribution through the bipolar device was analyzed and areas of localized very high current density were identified.

Author

Dr Aderinto Ogunniyi (Army Research Laboratory)

Co-authors

Dr Stephen Bayne (Texas Tech University) Dr Miguel Hinojosa (Army Research Laboratory) Ms Emily Hirsch (Texas Tech University) Ms Heather O'Brien (Army Research Laboratory) Dr Bejoy Pushpakaran (Texas Tech University) Mr James Schrock (Texas Tech University)

Presentation materials

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