18–22 Jun 2017
Hilton Brighton Metropole Hotel
Europe/London timezone

RADIOGRAPHIC RESEARCH OF THE METAL-PUFF PLASMA JETS FORMED BY THE VACUUM ARC DISCHARGE

20 Jun 2017, 13:30
1h 30m
Hall 4 / Cambridge (Hilton Brighton Metropole Hotel)

Hall 4 / Cambridge

Hilton Brighton Metropole Hotel

Board: 35
Poster High-Energy Density Physics and Technology Poster session II - High-Energy Density Physics and Technology

Speaker

Alexander Rousskikh (Institute of High Current Electronics)

Description

Soft x-ray radiography (≈ 1÷2 keV) of a bismuth and aluminum metal-puff plasma formed by the high-current vacuum arc discharge is presented. The plasma gun with the arc current ≈ 60 kA and the current rise time ≈ 7 μs was used to produce a metal-puff plasma jets. The compact pulsed radiograph XPG-1 (250 kA, 220 ns) with X-pinch and PZ-pinch load was used as a source of the soft X-ray radiation. X-pinch load consisted of four Mo wires with diameter 25 µm. PZ-pinch load is a miniature plasma jet. Jet length is equal to 1.5 mm. The spatial and temporal parameters of the radiating hot spot of X-pinch and PZ-pinch loads are close to each other. X-ray backlighting images of the researched plasma jet and the Bi step-wedge with a step thickness of ≈ 100 nm were recorded simultaneously at the experiment. The comparison of the plasma jet x-ray image has enabled to estimate the dependencies of the jet linear mass on the arc current. Experiments have shown that when the arc current density reaches ≈ 3•105 A/cm2 the evaporation rate of the electrode material reaches ≈ 100 µg/µs, that under the plasma velocity ≈ 0.5 cm/µs provides a plasma jet linear mass ≈ 200 µg/cm. At a distance of ≈ 1-2 mm from the arc cathode surface the sharp increase of jet linear mass (up to ≈ 500 µg/cm) was occurred.

Work supported by the grant Russian Scientific Foundation # 16-19-10142.

Author

Alexander Rousskikh (Institute of High Current Electronics)

Co-authors

Mr Anton Artyomov (Institute of High Current Electronics SB RAS) Dr Rina Baksht (Institute of High Current Electronics SB RAS) Mr Anatoly Fedunin (Institute of High Current Electronics SB RAS) Dr Vladimir Oreshkin (Institute of High Current Electronics SB RAS) Mr Alexander Zhigalin (Institute of High Current Electronics SB RAS)

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