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2016 IEEE Power Modulator and High Voltage Conference
2016 IEEE Power Modulator and High Voltage Conference

5–9 Jul 2016
<a href=http://www.sfpalace.com/>Palace Hotel San Francisco</a>
America/Los_Angeles timezone
  • Overview
  • Call for Abstracts
    • Timetable
    • Contribution List
    • PRELIMINARY Book of Abstracts
    • Registration

    Questions?

    • mkemp@slac.stanford.edu

    Details for Aderinto Ogunniyi

    Dr
    US Army Research Laboratory

    Author in the following contributions

    • Characterization of high voltage 4H-SiC IGBTs with wide epitaxial drift regions.
    • High-Voltage SiC Thyristor Burst-Rate Switching
    • Evaluation of Long Term Reliability and Safe Operating Area of 15 kV SiC PiN Diodes during Ultra-High Current Pulsed Conditions
    • Simulation and Design Trade-Off Analysis of 15 kV SiC SGTO Thyristor during Extreme Pulsed Overcurrent Conditions
    • SILVACO BASED ELECTRO-THERMAL ANALYSIS OF 4H-SiC TIV-JFET STRUCTURE UNDER EXTREMELY HIGH CURRENT DENSITY RESISTIVE SWITCHING
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