Speaker
            Mr
    Jinchang Hu
        
            (Huazhong University of Science and Technology)
        
    Description
Thyristor  has  been  widely used in HVDC transmission system and pulsed power system.The thyristor will  be  damaged if transient temperature rise of valve plate is too high ,and it will result in the system failure.The relationship between peak value of pulse current flowed  the  circuit  and maximum transient temperature rise of thyristor in pulsed power system  was  investigated  in  this  paper. Firstly, one circuit used to measure junction temperature  rise of thyristor was designed,which was based on the theory that there is a linear  relationship  between  the  conducting  voltage  drop  of  thyristor and junction temperature rise  of  thyristor.The thyristor was kept on during the measuring process in the  designed  circuit.The  junction temperature rise of thyristor was calculated through the  thermal  sensitive  curve and the change of the conducting voltage drop of thyristor which  can  be  measured in the designed circuit.The maximum junction temperature rise of thyristor  was  obtained  after  one  heavy  pulse current flowed.Then the equivalent thermal impedance  model was built.The thermal resistance and thermal capacitance can be obtained by transient  thermal  impedance curve fitting,and parameter of equivalent current source can be calculated  through the power curve.The temperature variation curve was calculated by the  thermal  impedance  simulation  model  as  the thyristor flowed pulse current.The maximum  junction  temperature  rise of thyristor obtained from the simulation result was almost  the  same  as  maximum temperature rise obtained from experiment data.A method to evaluate the temperature rise of thyristor was obtained through the research.
            Author
        
            
                
                        Mr
                    
                
                    
                        Jinchang Hu
                    
                
                
                        (Huazhong University of Science and Technology)
                    
            
        
    
        Co-authors
        
            
                
                        Prof.
                    
                
                    
                        Fuchang Lin
                    
                
                
                        (Huazhong University of Science and Technology)
                    
            
        
            
                
                        Dr
                    
                
                    
                        Ling Dai
                    
                
                
                        (Huazhong University of Science and Technology)
                    
            
        
            
                
                        Mr
                    
                
                    
                        Yang Yang
                    
                
                
                        (Huazhong University of Science and Technolofy)
                    
            
        
            
                
                        Mr
                    
                
                    
                        Zhang Qin
                    
                
                
                        (Huazhong University of Science and Technology)
                    
            
        
    
        