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    2016 IEEE Power Modulator and High Voltage Conference
    2016 IEEE Power Modulator and High Voltage Conference

    5–9 Jul 2016
    <a href=http://www.sfpalace.com/>Palace Hotel San Francisco</a>
    America/Los_Angeles timezone

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    • Overview
    • Call for Abstracts
      • Timetable
      • Contribution List
      • PRELIMINARY Book of Abstracts
      • Registration

      Questions?

      • mkemp@slac.stanford.edu

      Details for Aderinto Ogunniyi

      Dr
      Army Research Laboratory

      Author in the following contributions

      • Characterization of high voltage 4H-SiC IGBTs with wide epitaxial drift regions.
      • High-Voltage SiC Thyristor Burst-Rate Switching
      • Evaluation of Long Term Reliability and Safe Operating Area of 15 kV SiC PiN Diodes during Ultra-High Current Pulsed Conditions
      • Simulation and Design Trade-Off Analysis of 15 kV SiC SGTO Thyristor during Extreme Pulsed Overcurrent Conditions
      • SILVACO BASED ELECTRO-THERMAL ANALYSIS OF 4H-SiC TIV-JFET STRUCTURE UNDER EXTREMELY HIGH CURRENT DENSITY RESISTIVE SWITCHING
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