Speaker
Mr
Ralf Röder
(CiS Forschungsinstitut für Mirkosensorik GmbH)
Description
Position sensitive detectors have many applications in measurement technology. In this paper we investigate the influence of a trench in the vicinity of the p-n junction of the silicon detector. The trenches were fabricated by inductive coupled plasma (ICP) etching technology. Both, the detectors with and without trenches were processed at the same wafer for comparable results. Further, we discuss the influence of the trench in view of electrical parameters and cross-talk behaviour in a 4-quadrants silicon photodiode.
For high temperature applications a position dependent line array based on SOI (silicon on insulator) material was fabricated. The electrical and optical properties of the SOI detector are presented and discussed.
Author
Dr
Christian Möller
(CiS Forschungsinstitut für Mikrosensorik GmbH)
Co-authors
Mr
Ralf Röder
(CiS Forschungsinstitut für Mirkosensorik GmbH)
Mr
Thomas Klein
(CiS Forschungsinstitut für Mirkosensorik GmbH)
Prof.
Thomas Ortlepp
(CiS Forschungsinstitut für Mirkosensorik GmbH)
