Speaker
Description
AUTHOR: M. Jimenez, J. Moreno, R. Golingo, M. Bradley, and L. Couedel.
Affiliation: Physics and Engineering Physics Department, University of Saskatchewan, Saskatoon, SK S7N 5E2, Canada.
Plasma Immersion Ion Implantation (PIII) is a widely used technique in materials science and semiconductor manufacturing to modify surface properties through ion implantation. This process involves immersing a target in plasma and applying negative high-voltage pulses (NHVP) to accelerate ions onto the surface of the material. A key aspect of PIII is the dynamics of the plasma sheath expansion during the implantation pulse; this governs the implantation dose rate, as well as other aspects such as surface charge accumulation.
This research focuses on investigating sheath dynamics in a low-temperature inductively coupled plasma ICP-PIII system at the University of Saskatchewan Plasma Physics Lab (USask PPL). Laser-Induced Fluorescence (LIF) diagnostics is employed to spatially resolve the ion velocity distribution function (IVDF) and ion temperature, providing critical insights into plasma-surface interactions. Initial results were obtained using time-integrated LIF spectroscopy, which captured steady-state ion dynamics during the NHVP application. However, to fully characterize the high-voltage sheath evolution throughout the pulse duration, time-resolved LIF measurements are required. Future experiments will focus on advancing time-resolved LIF diagnostics to achieve a more detailed understanding of transient sheath behaviour, which is crucial for optimizing ion implantation efficiency and enhancing surface modification properties.
| Keyword-1 | Sheath expansion |
|---|---|
| Keyword-2 | Laser Induced fluorescence |
| Keyword-3 | Plasma diagnostics |
