Speaker
Description
The development of high-efficiency light-emitting diodes (LEDs) relies on advanced luminescent materials that enhance their performance. BaSiP3N7:Eu²⁺ has emerged as a promising phosphor due to its strong luminescence properties. To gain deeper insight into its electronic and optical behavior, we employed a combination of experimental techniques, including X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES), resonant inelastic X-ray scattering (RIXS), and X-ray excited optical luminescence (XEOL), complemented by density functional theory (DFT) calculations.
Our study reveals key electron transition mechanisms, notably the 5d → 4f transition of Eu²⁺, which serves as the primary indicator of luminescence efficiency. Additionally, we examine charge transfer effects, thermal quenching mechanisms, energy transfer pathways, and defect impurities arising from material synthesis in BaSiPN:Eu²⁺, providing deeper insight into the factors that govern its luminescence performance. These findings deepen our understanding of the electronic and optical properties of BaSiP3N7:Eu²⁺, guiding its optimization as a high-performance phosphor for LED applications.
| Keyword-1 | Synchrotron techniques |
|---|---|
| Keyword-2 | DFT |
| Keyword-3 | Luminiscence & LEDs |
