8–13 Jun 2025
America/Winnipeg timezone
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Ising Spin-Orbit Coupling and Electronic Band Structures of t2g Electrons at Charged Ferroelectric Domain Walls

10 Jun 2025, 10:45
15m
Oral Competition (Graduate Student) / Compétition orale (Étudiant(e) du 2e ou 3e cycle) Condensed Matter and Materials Physics / Physique de la matière condensée et matériaux (DCMMP-DPMCM) (DCMMP) T1-4 Quantum and Soft Materials | Matériaux quantiques et mous (DPMCM)

Speaker

Ms Maryam Nasir

Description

The interplay between electron charge, spin, and ferroelectric polarization is under-explored for conducting ferroelectric domain walls. We investigated the electronic band structures of $t_{2g}$ electrons, confined to charged 90$^\circ$ domain walls in barium titanate ($BaTiO_3$), a prototypical perovskite ferroelectric. A key novel aspect of our study is the explicit inclusion of both orbital and spin degrees of freedom in the Hamiltonian. This leads to an Ising-type spin-orbit coupling. We constructed a tight-binding model(TBM) for $t_2g$ electrons that is constrained by symmetries of the domain wall, including time-reversal, mirror, and rotational symmetries. First-principles density functional theory (DFT) calculations were performed to extract the tight binding parameters. Our findings offer new insights into spin-orbit interactions at ferroelectric domain walls and open avenues for their potential use in next-generation electronic and spintronic devices

Keyword-1 Charged Domain Walls
Keyword-2 Spin-Orbit Coupling
Keyword-3 Polarization

Authors

Ms Maryam Nasir Maryam Nasir (Guest)

Presentation materials