2016 CAP Congress / Congrès de l'ACP 2016

Four state ferroelectric memory devices at room temperature

14 Jun 2016, 19:52

2m

SITE Atrium (University of Ottawa)

Poster (Student, In Competition) / Affiche (Étudiant(e), inscrit à la compétition) Condensed Matter and Materials Physics / Physique de la matière condensée et matériaux (DCMMP-DPMCM) DCMMP Poster Session with beer / Session d'affiches, avec bière DPMCM

Speaker

Mr Joyprokash Chakrabartty (University of Quebec, INRS-EMT)

Description

We report the four step ferroelectric polarization switching in BiFeO3(BFO)/SrRuO3 (SRO)/BiMnO3(BMO) heterostructure thin films. All crystalline films are grown on (100) oriented Niobium doped SrTiO3 (NSTO) single crystal substrates by pulsed laser deposition. We found a novel four step ferroelectric polarization switching dynamics that clearly differs from that of individual layers. The binary states of ferroelectric polarization in ferroelectrics are considered for digital data storage applications. Multiple energy states of ferroelectric polarization are essential to shrinking the dimension down of the memory devices. No clear experimental evidences have been reported until now towards multi state ferroelectric polarization switching in multiferroic perovskites at room temperature. Our results show a promising device concept that can enhance the data storage capacity in heterostucture capacitor devices.