13–19 Jun 2015
University of Alberta
America/Edmonton timezone
Welcome to the 2015 CAP Congress! / Bienvenue au congrès de l'ACP 2015!

Session

T1-8 Special session to honor Dr. Akira Hirose I (DPP) / Session speciale en l'honneur de Dr. Akira Hirose I (DPP)

T1-8
16 Jun 2015, 08:45
University of Alberta

University of Alberta

Edmonton, AB

Conveners

T1-8 Special session to honor Dr. Akira Hirose I (DPP) / Session speciale en l'honneur de Dr. Akira Hirose I (DPP)

  • Luc Stafford (U.Montréal)

Presentation materials

There are no materials yet.

  1. Ge Zhuang (Huazhong University of Science and Technology)
    16/06/2015, 08:45
    Plasma Physics / Physique des plasmas (DPP)
    Invited Speaker / Conférencier invité
    The experimental research in recent years on the J-TEXT tokamak are summarized, the most significant results including observation of core magnetic and density perturbations associated with sawtooth events and tearing instabilities by a high-performance polarimeter-interferometer (POLARIS), investigation of a rotating helical magnetic field perturbation on tearing modes, studies of resonant...
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  2. Dr Weixing Ding (UCLA)
    16/06/2015, 09:15
    Plasma Physics / Physique des plasmas (DPP)
    Invited Speaker / Conférencier invité
    Both the magnetic fluctuations and electron density fluctuations are important parameters for fusion-oriented plasma research since fluctuation-driven transport dominates in high temperature magnetic confinement devices. The far-infrared laser systems are employed to measure both the Faraday rotation and electron density simultaneously with time response up to a few microseconds in reversed...
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  3. Prof. Michael Bradley (Physics & Engineering Physics, University of Saskatchewan)
    16/06/2015, 09:45
    Plasma Physics / Physique des plasmas (DPP)
    Invited Speaker / Conférencier invité
    Plasma Ion Implantation (PII) is a versatile ion implantation technique which allows very high fluence ion implantation into a range of targets. The technique is conformal to the surface of the implanted object, which makes it suitable for a wide range of applications. The ease with which high ion fluences can be delivered means that the technique can be used to change the stoichiometry (e.g....
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