HEP Thin Films Biweekly

→ US/Pacific
    • 1
      Single-pad InP characterization paper update
      Speakers: Earl Russell Tang Almazan (University of California,Santa Cruz (US)), Dr Jennifer Ott (University of California,Santa Cruz (US))

      Meeting minutes

      Attending: Shiva, Katie, Max, Taylor, Sungjoon, Jenni, Shubhankar, Richville

       

      General

      -        https://github.com/hepthinfilms - RIL people and ANL all missing, resend invites

      -        Larger group (incl e.g. Mathieu, Timon) HEP Thin Films meeting at CPAD? Zoom meeting already before? Maybe in the next weeks, once Mike is back

      -        NSF opportunity? https://www.nsf.gov/funding/opportunities/mps-materials-mps-materials-research-programs/nsf26-521/solicitation

      -        UH umbrella grant renewal: include some Thin Films readout

      -        Conversation about CXR

       

      Sungjoon

      -        Waiting for decision by lab leadership on funds for Jessica 

      -        Considering to transfer tool to Sungjoon’s division to ease access

      -        Jenni needs to send older slides to Sungjoon

      -        Mike looking into vendors for InP?

      -        Coated some ITO glass to be deposited with aSe

      -        Group gathering at ANL?

       

      Max

      -        Open-source tool simulation: including steering voltages; estimate of charge collection – only between two anodes

      -        Presentation to walk through sw in more detail next meeting, to facilitate use by other students

      -        Add to Github – look for invite, generate new repo or other structure as appropriate

      Katie

      -        Multilayer Se/Se-Te samples, ca. 8 nm each, 150 nm total

      -        SEM, SEM-EDS, ellipsometry

      -        PDS system for high-level absorption spectroscopy

      -        TOF-SIMS to UCSB

      -        Still looking for DLTS

      -        Ready to fabricate on Si wafers to test for avalanche performance

      -        Start building simulation to understand E field in these devices to be ready for comparison with devices

      -        ‘corners’ in aSe on TFT: higher performance, but also burn-out. For future CMOS device, try to avoid these areas. Understand heigh / aspect ratio of pixels...

      -        What info to provide to Taylor? – schematic, biasing

       

      Taylor

      -        Waiting for work 😉

      -        Contact resistance sweep

      -        Transient responses: do already, or wait until material more defined?

      -        InP of complex device not converging without traps: maybe in interface? ‘block’ of InP was okay

      -        Bring down currents from trap by contact resistance?

      -        Adapt Cr/Au for contacts!

      UH

      -        Check how low trap concentration can go before stopping to converge? - Ca. 1e12

      -        Shubhankar: try to run multipad Sentaurus TCAD transients from Taylor’s 2D or 3D geometry (e-fields already done previously)

      -        Shubhankar / Christian: installed Thorlabs focusing optics; switched to red laser, now working on collimating – resolution still not good

    • 2
      Argonne update
      Speakers: Jessica Metcalfe (Argonne National Laboratory (US)), Sungjoon Kim
    • 3
      UHawaii update
      Speakers: Dr Jennifer Ott (University of California,Santa Cruz (US)), Richville Fagaragan (University of Hawaii at Manoa)
    • 4
      RIL update
      Speakers: Kaitlin Hellier (University of California, Santa Cruz), Shiva Abbaszadeh
    • 5
      SCIPP update
      Speakers: Earl Russell Tang Almazan (University of California,Santa Cruz (US)), Taylor Shin, Vitaliy Fadeyev (University of California,Santa Cruz (US))
    • 6
      AOB