20–21 Feb 2026
Ewing Christian College
Asia/Kolkata timezone
The Conference is funded by the Anusandhan National Research Foundation (ANRF), Govt. of India and is collaborated by the National Academy of Sciences India (NASI).

Effect of Film Thickness and Thermal Treatment on the Optical and Electrical Properties of Selenium Thin Films

Not scheduled
12m
Department of Physics (Ewing Christian College)

Department of Physics

Ewing Christian College

Muthiganj, Prayagraj, 211003
Oral Condensed Matter Physics

Speaker

Dr Pankaj Srivastava (School of Life & Basic Sciences, Jaipur National University, Jaipur 302017, India)

Description

Selenium (Se) thin films of thickness 40–100 nm were deposited by thermal evaporation to
study the effect of thickness and thermal treatment on their optical and electrical properties.
Optical results show that increasing thickness reduces the optical band gap, while thermal
treatment causes a red shift in the absorption edge, indicating improved structural ordering.
Electrical measurements of the 100 nm film show temperature-dependent conductivity. At
room temperature, conductivity is low and nearly linear with voltage (ohmic behavior). At
80°C and 100°C, conductivity increases significantly (up to ~10⁻⁸ Ω⁻¹m⁻¹) and shows
nonlinear behavior at higher voltages, indicating trap-controlled space-charge-limited
conduction. The results confirm thermally activated charge transport and reduced defect
states after heating.
These findings demonstrate that thickness control and thermal treatment effectively tune the
optoelectronic properties of selenium thin films for device applications.

Author

Dr Pankaj Srivastava (School of Life & Basic Sciences, Jaipur National University, Jaipur 302017, India)

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