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Description
Perovskite single-crystal semiconductors represent the pinnacle of material quality for optoelectronic applications, offering dramatically reduced trap densities, suppressed grain boundary scattering, and longer charge carrier diffusion lengths compared to their polycrystalline counterparts. all-inorganic cesium lead bromide (CsPbBr₃) has attracted extraordinary research attention owing to its exceptional combination of a direct bandgap (~2.1-2.2 eV), high atomic number constituents, superior ambient stability, and tunable optical properties characteristics that collectively make it a compelling candidate for high-performance photodetectors and ionizing radiation sensors. successful synthesis of high-quality CsPbBr₃ perovskite single crystals (PSCs) at a remarkably low processing temperature of 65°C via the inverse temperature crystallization (ITC) method. Structural characterization by powder X-ray diffraction confirmed the high crystallinity of the grown crystals. Optical characterization revealed a sharp photoluminescence emission at 565 nm, and a bandgap of ~2.18 eV was extracted from the Tauc relationship applied to UV-Vis absorption spectra