10–12 Jun 2026
Valencia
Europe/Zurich timezone
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Solution-processed growth of high-quality all-inorganic CsPbBr₃ perovskite single crystals via inverse temperature crystallization for optoelectronic detector applications

11 Jun 2026, 09:40
15m
Valencia

Valencia

Speaker

RAMASHANKER GUPTA (Charles University)

Description

Perovskite single-crystal semiconductors represent the pinnacle of material quality for optoelectronic applications, offering dramatically reduced trap densities, suppressed grain boundary scattering, and longer charge carrier diffusion lengths compared to their polycrystalline counterparts. all-inorganic cesium lead bromide (CsPbBr₃) has attracted extraordinary research attention owing to its exceptional combination of a direct bandgap (~2.1-2.2 eV), high atomic number constituents, superior ambient stability, and tunable optical properties characteristics that collectively make it a compelling candidate for high-performance photodetectors and ionizing radiation sensors. successful synthesis of high-quality CsPbBr₃ perovskite single crystals (PSCs) at a remarkably low processing temperature of 65°C via the inverse temperature crystallization (ITC) method. Structural characterization by powder X-ray diffraction confirmed the high crystallinity of the grown crystals. Optical characterization revealed a sharp photoluminescence emission at 565 nm, and a bandgap of ~2.18 eV was extracted from the Tauc relationship applied to UV-Vis absorption spectra

Author

RAMASHANKER GUPTA (Charles University)

Co-authors

Ms Upasana Das (Autonomous University of Madrid) Prof. Roman Grill (Charles University) Prof. Eduard Belas (Charles University)

Presentation materials

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