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Description
This work presents a comparative study of defect states in FAPbBr₃ and CsPbBr₃ single crystals using thermally stimulated current (TSC) measurements. Trap states were investigated over a temperature range of 100–300 K to identify dominant trapping centres. TSC spectra reveal multiple trap levels with varying activation energies in both materials. Data analysis was performed using the Simultaneous Multiple Peak Analysis (SIMPA) method to extract individual trap parameters. These parameters were then used to quantitatively determine the capture cross section (D), trap density (N), and trap activation energy (E). Both crystals exhibit a combination of shallow and deep traps with varying concentration levels, and we will compare the defect signature of both solution-grown and Bridgman perovskite crystals. These findings provide insight into charge trapping mechanisms relevant for radiation detection performance and highlight the importance of defect analysis in optimising perovskite-based detectors.