Encontro de integração dos membros do Programa de Pós-graduação em Física

Structural changes, Raman and Infrared Activity of Strained Monolayer GaSe

2 Dec 2016, 14:00

1h 30m

Salão dos Conselhos (UFLA)

Poster Poster

Speaker

Diêgo Santos (UFLA)

Description

D. S. Santosa, R. Longuinhosa, J. Ribeiro-Soares a

a Departamento de Física, Universidade Federal de Lavras, Lavras, MG, PO Box 3037, 37200-000, Brazil

• Contributed equally in this work

Abstract:

Since graphene was discovered, many two-dimensional (2D or layered) materials has been widely targeted by their many expected future technological applications. Gallium selenide (GaSe) is a layered material from the group IIIA metal monochalcogenides (GIIIAMM). It has promising physical and chemical properties for new lubricant, optoelectronic, photovoltaic and nonlinear optics applications.

In this work we use group theory and first-principle calculations to investigate the structural changes induced by strain in monolayer GaSe, as well as the Raman and infrared active modes in this new system. We show the evolvement of the optical modes from the β and ε bulk GaSe polytypes when exfoliated down to the monolayer level, and its changes when strain is applied. These results clarify fundamental aspects for the engineering of new GaSe-based strain sensor devices, the fast and reliable spectroscopic crystallographic orientation, and strain level calibration.