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SUMMARY:Radiation Effects in Silicon Photonics Micro-Ring Modulators and W
 aveguides for High-Energy Physics
DTSTART:20260528T123000Z
DTEND:20260528T133000Z
DTSTAMP:20260527T013400Z
UID:indico-event-16905@indico.global
DESCRIPTION:Speakers: Daniele Alfiero (CERN/University of Birmingham)\n\nS
 ilicon photonics technologies have found major applications in optical tra
 nsceivers for big data centres. For future high-energy physics experiments
 \, silicon photonics-based transceivers are being investigated at CERN wit
 hin the EP R&D programs. Recently\, this technology has demonstrated promi
 sing radiation tolerance\, making it increasingly suitable for such applic
 ations. This seminar will introduce the basic functionality of a silicon p
 hotonics transceiver\, followed by a discussion of ionizing radiation effe
 cts on two key components: micro-ring modulators (MRMs) and photonic waveg
 uides. The dynamic electro-optic response of the modulators is first chara
 cterized up to a TID of 12.3 MGy\, including temperature effects and annea
 ling studies that show an almost complete recovery of performance. Silicon
  photonics waveguides have been characterized through neutron test\, showi
 ng a moderate increase in radiation-induced attenuation\, and they have be
 en investigated under heavy-ion irradiation for the first time\, revealing
  a strong tolerance to optical single-event transients (OSETs). Preliminar
 y TCAD simulation results are also presented\, finding a good agreement wi
 th both the literature and the experimental heavy-ion measurements.\n\nhtt
 ps://indico.global/event/16905/
LOCATION:Small Lecture Theatre (Poynting)
URL:https://indico.global/event/16905/
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