Marcos Derós Timing performance simulation for 3D 4H-SiC detector Yuhang Tan, Tao Yang, Kai Liu, Congcong Wang, Xiyuan Zhang, Mei Zhao, Xiaochuan Xia, Hongwei Liang et al. Micromachines, 13, 46 (2021) Hide abstract | Show figures | Show BibTeX | Show discussion | View PDF | 2111.14640v2 To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. 3D structure, which decouples thickness and distance between electrodes, further improves timing performance and radiation hardness of the detector. We developed a simulation software - RASER (RAdiation SEmiconductoR) to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software is verified by comparing time resolution results of simulation with data. The rough time resolution of 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization. Authors' comments: 9 pages, 7 figures